Operation Principle and Simulation of Planar Diode with Tunnel n-p-n Border

THz and sub-THz radiation is useful in the radio astronomy field, medical visualization, surveillance etc. A novel two-terminal device is offered. It represents a diode containing active lateral border. The operation principle of the diode is usage of intervalley electron transfer and electron tunneling in tunnel junction of lateral border. The electronic processes that occur in diodes are considered. The one of a possible numerical model for analyze of electronic processes in the diodes has been proposed. It is based on applying the Ensemble Monte Carlo technique and generation of charge carrier rate due to tunneling effects. Some results are obtained via using the model for GaAs-based planar diode structure is represented.