Sharpening of the Pulse Front by a Silicon Pulse Switch

The switching process during the pulse sharpening by silicon diodes with the p+-p-n-n+ structure type and its different area: 0.16 cm
²
and 0.09 cm
²
was experimentally studied. A reverse polarity pulse with amplitude from 5.43 to 12.80 kV and an average front of 9 ns at the level of 0.25-0.90 was applied to one or two series-connected diodes installed in the gap of the central conductor of a 50-Ohm coaxial line. After the transition of the diode from the blocking to the conducting state, the pulses with amplitude of 1.05 to 4.91 kV with a front of about 1 ns were obtained in the line. Switching diodes occurs under the influence of a reverse voltage rate of less than 1 kV/ns. The result is obtained with diodes with the possibility of using in the mode of running wave in the nanosecond range.