Turn-on Performance Comparison of SiC SingleDriver Module (SDM) and Multi-Driver Module (MDM)

Parallel connection of MOSFETs is often used to increase the current handling capability of power modules. Traditional single-driver multi-chip module (SDM) needs to slow down the driving speed by using current balancing gate resistor in order to counter the influence of asymmetric gate loop parasitic parameters which tend to cause transient current unbalance and intrinsic oscillation. Consequently, the SDM performance is comprised from the switching loss point of view. Therefore, multidriver multi-chip module (MDM) which uses individual driver to drive each device is proposed. This paper developed analytical models to characterize the transient current sharing and inherent oscillation for the turn-on process of the SDM and MDM. Based on the developed model, the performance of the SDM and MDM are compared. The advantages and disadvantages of the MDM are quantitatively presented. Experiments are conducted to verify the analysis.