Three Stage Class AB Power Amplifier in 90 nm CMOS Process for IoT Applications

A highly efficient three-stage 2.8 GHz fully-integrated Si power amplifier (PA) using 90 nm CMOS process for IoT applications is reported in this work. The designed PA exhibits a simulated output power of 20.33 dBm, gain of 20.27 dB and 32.74% power added efficiency (PAE). This fully integrated PA achieves feasible frequency performance for critical IoT range. This paper addresses the potential for the incorporation of not only linear but also highly efficient PA architectures at GHz frequencies into nanometer CMOS technologies. The performances of the proposed design are then compared with other referred power amplifier circuits. It can be noticed that this proposed design exhibits outstanding performance incase of PAE and power gain. Three-stage PA is proposed targeting the 802.11n WLAN protocol that operates in the 2.8 GHz frequency band with strict linearity specifications.