Pyroelectric CMOS Compatible Sensor Element Based on Hafnium Oxide Thin Films

Nanometer-thin ferroelectric hafnium oxide (HfO
₂
) films enable manufacturing of integrated infrared sensors in a CMOS compatible process. By depositing the pyroelectric film on an area-enhanced substrate, we significantly improve the sensor element response by a factor of more than 12. Integration challenges of doped HfO
₂
in 3D structures are assessed, and the pyroelectric signal amplitude is compared for Si-doped material and the Hf
_0.5
Zr
_0.5
O
₂
mixed oxide.