A 100 W, UHF to S-Band RF Switch in the Super-Lattice Castellated Field Effect Transistor (SLCFET) 3S Process

High power RF switches were designed in the Super-Lattice Castellated Field Effect Transistor (SLCFET) 3S process. The design goals were low ON-state insertion loss (0.25 dB for UHF-band, 1 dB for S-band), high OFF-state isolation from the RF input (65 dB for UHF-band, 40 dB for S-band), high operating power (100 W pulsed RF through S-band), and a high switch failure power (200 W pulsed RF, 100 W CW through S-band). We used an RF stacking approach in the design in order to allow for voltage swings that exceed the drain-gate breakdown voltage of the process. Measurements performed on switches that were fabricated indicate that all of the goals were met, and demonstrate that a reliable SLCFET process would offer advantages over many existing GaN HEMT processes in RF switching applications.