A Reconfigurable SOI CMOS Doherty Power Amplifier Module for Broadband LTE High-Power User Equipment Applications

A reconfigurable broadband Doherty PA module for LTE HPUE (High Power User Equipment) applications is presented, which is the first to be based on an SOI-CMOS PA without predistortion and supply modulation. The PA die (1.3×1.7mm
²
) is fabricated in a 130nm SOI-CMOS process and assembled, using flip-chip, on a 3.2×3.7mm
²
laminate package. From 1.9GHz to 2.7GHz, the PA provides 28dBm of output power (P
out
) under 3.4V supply voltage (Vdd), with a PAE higher than 35% and an E-UTRA ACLR lower than -35dBc when using a 10MHz-50RB QPSK LTE uplink signal, without predistortion. At 2.3GHz, the proposed PA achieves 43.5% of PAE and -39.6dBc of ACLR at 28dBm of P
out
. When operating at Vdd=5V (HPUE mode), the PA reaches a saturated power of 4W with a maximum PAE of 57% and delivers a P
out
of 31dBm with 42.6% of PAE and -35.7dBc of ACLR using a 20MHz-100RB QPSK LTE signal.