Photo-assisted Processing of Amorphous Gallium Oxide (a-GaOx) Thin Film for Flexible and Transparent Device Application

We report the photo-assisted processing of solution-processed ultra wide bandgap oxide (E
g
≥4.8 eV), amorphous gallium oxide (a-GaO
x
), to enhance its conductivity. The 12-nm-thick a-GaO
x
), film was subjected to UV treatment at 115°C for 60 min. The results show that UV treatment induced a minimal change in the electrical properties unlike what is observed in other wide band gap (E
g
~ 3 eV) oxide materials, such as a-InZnO and a-InGaZnO.