Evaluation of thermoelectric properties of Ga-Sn-O thin film formed by Mist CVD method

We fabricated Ga-Sn-O (GTO) thin film thermoelectric conversion devices at atmospheric pressure by mist chemical vapor deposition (Mist CVD) method and evaluated the power factor (PF). The best PF was 0.050 mW / mK
²
, with a Seebeck coefficient of -75 µV / K and a conductivity of 89 S / cm.