The lateral photovoltage scanning method (LPS): Understanding doping variations in silicon crystals

The lateral photovoltage scanning method (LPS) can be used to detect undesired impurities which appear in silicon crystals during growth. Our goal is to make a digital twin of the LPS method. To this end, we replace inflexible blackbox code with a physics preserving finite volume discretization, confirming three theoretical results via a new simulation strategy. By making the simulation transparent, it becomes easier to trace intermediate results and gain theoretical insights.