Enhanced dynamic properties of Ge-on-Si mode-evolution waveguide photodetectors

This work discusses coupled three-dimensional electromagnetic and electrical simulations of a Ge-on-Si waveguide photodetector where light is fed through a lateral waveguide. The numerical results show that this coupling solution leads to more uniform photon and carrier distributions along the Ge absorber compared to a conventional butt-coupled detector, allowing a broader electrooptical bandwidth for high input power levels in good agreement with available experimental measurements.