A New GaN Hybrid Resonant-Clamping Gate driver For High Frequency SiC MOSFETs

Conventional resonant gate driver suffers from significant reverse recovery loss due to the usage of Si devices, especially at high frequencies. A novel hybrid resonant gate driver is proposed in this design composed by two hybrid GaN HEMT and Schottky diode half bridges. The hybrid topology merges the merits of efficient resonant turn on and ultra-fast turn off by GaN. The GaN based hybrid resonant-clamping gate driver achieves 29% reduction in gate driver active area. It also has 49.3% reduction in power loss is achieved compared with Si full bridge resonant gate driver.