Electrical property variability of GaN transistors in parallel and their impact on fast switching operations

In this paper, the impact of paralleling nonidentical Gallium Nitride High Electron Mobility transistors (GaN HEMTs) in a high-speed switch is investigated. GaN HEMTs with a packaged p-gate and a die of MIS-gate types are being evaluated theoretically. The p-type simulation results are verified with experimental prototype of a fast switching cell.