A Power Modulator Based on System-in-Package

This paper discusses a power modulator based on an integrated package. The device uses an HTCC-integrated package and is internally soldered with bare dies to achieve a high-density design. The power modulator includes a driver chip and a P-channel FET chip, which converts the 0V~5V drive signal into an output signal of 0V~28V, and boosts the current load capability to above 5A. The integrated package uses AlN-material to maximize the heat dissipation capability while miniaturizing the size. The power modulator can be widely used in communication electronic equipment, and is a key component of the power drive for many power amplifiers. Compared with the traditional power modulation solution, it has strong driving capability, small size and is easy to use.