High threshold voltage GaN HEMT with mixed conductive channel

In recent years, wide-band-gap semiconductor materials silicon carbide (SiC) and gallium nitride (GaN) are receiving widespread attention because of their superior performance. In particular, GaN devices have been applied in the fields of low-voltage miniaturized power supplies and 5G communications. For GaN high electron mobility transistor (HEMT) devices used in miniaturized power supplies, the lower threshold voltage (V
_th
) is a problem that needs to be solved urgently. In this paper, the HEMT device having a novel mixed conducting channel. The device raises the threshold voltage to 3.21V while the saturation current capability still reached 0.46A/mm. As with conventional devices, the saturation current capability of the new device is affected by the Al composition of the barrier layer. But unlike conventional devices, the threshold voltage of the device can be adjusted by changing the doping concentration of the p-type doped layer within a certain range.