Research of Carbon Nanotube Through Silicon Via Array

Carbon Nanotube is a kind of new material with excellent electrical properties. Through Silicon Via (TSV) is the essential structure of interconnect in Three Dimensional System in Package (3D SiP). A Carbon Nanotube-Copper TSV(CN-C-TSV) array structure model is proposed, and the three-dimensional physical model and the equivalent circuit model, derived based on the RLCG parameter calculation model of CN-C-TSV is studied in this paper. The electrical characteristics & electromagnetic properties of the array, including transmission performance S parameter, Electric field and Magnetic field distribution are analyzed and compared to the pure copper TSV array under high-frequency signal transmission condition. In GSG (ground-signal-ground) transmission mode. The research results show that the CN-C-TSV array proposed in this paper has better performance on a number of key indicators than the traditional pure copper array: the return loss is reduced by 3dB in the corresponding frequency band and the reduction ratio of electric field radiation is five orders of magnitude, which lead to a wider application prospect.