A New GOA Circuit Composed of a-IGZO TFT with Function of Prevent Q-point Leakage

In the GOA (gate on array) circuit composed of a-IGZO (Indium Gallium Zinc Oxide) TFTs, the leakage of Q node needs to be prevented. In this work, in order to prevent the leakage of Q node at CK blank time, two new control units are used to control STT (series connected two transformer) structure in GOA circuit. After using the new STT control units, the leakage of Q node is well controlled. With the Vth shift to -3V, the voltage of Q node increases from 8.84 V to 19.03 V.