Influence of the field plate on the transient temperature distribution of GaN MISHEMT

In this work, the influence of different type field plates on the transient temperature distribution and the channel electric-field distribution of GaN MIS-HEMT has been studied by the TCAD Sentaurus. Both the slant source field plate and rectangular source field plate can help to optimize the channel electric-field distribution and the transient temperature distribution for GaN MIS-HEMT. Compared with the GaN MIS-HEMT without any field plate, the channel electric-field peak is reduced from 5.1MV/cm to 3.0MV/cm for the GaN MIS-HEMT with the rectangular source field plate and to 2.0MV/cm for the device with the slant source field plate, the highest transient channel temperature is reduced from 474K to 456K for the GaN MIS-HEMT with the rectangular source field plate and to 434K for the device with slant source field plate. The simulated results also prove that the slant source field plate is more effectively to optimize the channel electric-field distribution and the transient temperature distribution for GaN MIS-HEMT, when compared with the rectangular source field plate.