Deposition of High Thermal Conductivity AlN Heat Spreader Films

The low-temperature (<400 °C) deposition of polycrystalline AlN films is demonstrated by atomic layer annealing using either trimethyl aluminum (TMA) and anhydrous hydrazine (N
2
H
4
) or tris(dimethylamido) aluminum (TDMAA) and anhydrous N
2
H
4
with an argon plasma treatment where the ion energy is precisely controlled. High-quality AlN films are deposited with large grain size and low oxygen/carbon contamination and can be used as a templating layer for further high speed AlN film growth.