Giant Electroresistance Switching of Two-dimensional Ferroelectric α-In2Se3 on p+-Si

Recently, the demonstration of the ferroelectricity of $\alpha$ phase In
2
Se
3
$(\alpha -$In
2
Se
3
) has opened new opportunities to develop two-dimensional small bandgap ferroelectric memories. Conventional ferroelectric hetero-junction memories have been widely studied but the performance is still limited by the large bandgap of oxide-based ferroelectric materials and limits the diode ON current and results in low ON/OFF ratio. Accordingly, we propose a novel resistive switching memory device based on the unique ferroelectric and semiconductor properties of $\alpha -$In
2
Se
3
. By forming the hetero-junction of $\alpha -$In
2
Se
3
with the highly degenerated $\mathrm{p}^{+} -$Si substrate, we achieve a giant ferroelectric resistive ON/OFF ratio of $2.3 \times 10^{6}$.