Floating-Gate MOSFET based Class-AB Flipped Voltage Follower Cell

The paper presents a novel low-voltage/low-power class-AB flipped voltage follower cell. The proposed circuit utilizes the advantages of floating-gate and bulk-driven techniques. The floating-gate MOSFET allows low-voltage operation and improves the current sinking capability whereas bulk-driven transistor improves the current sourcing capability without increasing complexity of the circuit. The proposed circuit has approximately unity voltage gain, low output resistance, large bandwidth, high current driving capability and improved linearity. The proposed circuit has been simulated using 180 nm CMOS technology of BSIM3v3.