A Two-Stage LNA Design for 28GHz Band Of 5G on 45nm CMOS

The proposed low noise amplifier (LNA) is specified to operate near 28GHz, i.e. within modern 5G bandwidths. The amplifier consists of two stages, a common-gate and a modified common-drain stage. Individual consideration of stages is followed by design of the whole amplifier, the layout design and extraction of parasitics. The post-layout design results show the gain of more than 15dB and noise figure (NF) of 3.2dB using only 5mW of power. Both input and output return losses are better than 10dB at the centre frequency. The limited voltage headroom of the second stage does not allow to obtain 1dB compression point (OP
_1dB
) better than -10dBm. The design results are comparable to that found in recent LNA publications.