Sub-threshold Performance Analysis of Multi-Layered Trapezoidal Trench Gate Silicon On Nothing MOSFET for Low Power Applications

This paper presents a systematic analysis of a trapezoidal grooved stack gate Silicon on nothing (TGSG-SON) MOS structure using a TCAD simulator to decrease the short-channel effects (SCEs). An analytical model is presented here for the proposed TGSG-SON MOSFET by evaluating the 2-D Poisson's equation. Comparison has been done between SON and SOI trapezoidal trench gate MOSFETs to understand the ability of the SON structure. The influence of the corner angle and groove depth are investigated on the threshold voltage and subthreshold performance parameters. The analysis represents that TGSG-SON MOS transistor is more effective than SOI trapezoidal trench gate MOSFETs with better sub-threshold parameters and Hot carrier immunity. Further low permittivity air-filled buried layer of stack trapezoidal gate MOSFET is capable to efficiently enhance the device self heating effect (SHE).