Highly Efficient Nanostructured PtSe2 FET for Toxic Gas Detection

Transition metal chalcogenides (TMDs) based FET sensors have gained tremendous attention due to their excellent electronic and physical properties. The detection of toxic gases such as NO
₂
and NH3 are of paramount importance for human and environment. In this work, highly efficient nanostructured PtSe2 field-effect transistor (FET) is fabricated for toxic gas detection. The sensors exhibit very high response of 2220% and 675% at very low concentration of 10 ppm and 1 ppm, respectively, of NO
₂
. The selectivity test was done in cross-environment of NH3. These results indicate the promising toxic gas detection by PtSe2 FET sensor.