TCAD Investigation of Gate - Lag Measurements on Conventional and π - Gate AlGaN/GaN HEMTs

Dispersive effects that are evident in wide band gap semiconductors have undesirable fallouts with respect to the compressed drain current and output device power. In this paper, π - Gate AlGaN/GaN HEMT architecture has been investigated and explored for minimizing the effect of gate - lag phenomenon so observed due to the surface states available on the AlGaN barrier layer. Comparisons demonstrate a reduction in drain current compression by 8% in case of π - Gate HEMT in comparison to the Conventional HEMT due to the donor like surface states at different ambient temperatures, thus indicating the suitability of the π - Gate HEMT architecture for high power and high frequency applications.