Numerical optimization of a non-volatile storage element with optical recording and readout

The optimized parameters for the storage element of a non-volatile memory cell with optical control are presented. The storage element was optimized for a single TE-mode polarization to meet the requirements of both long- and short-distance communication. Also, the paper demonstrates how the optical mode regime changes with the variation of the waveguide geometry and phase state of Ge
2
Sb
2
Te
5
.