SiC MOS Power Module in Direct Pressed Die Technology and some Challenges for Implementation

The novel Direct Pressed Die (DPD) technology enables design and assembly of high performance module suitable for integration of SiC MOSFET devices. In order to provide a high module power required, e.g., for automotive application in main train, the utilization of a high number of paralleled devices is necessary and the possible oscillations excited between devices have to be avoided. The generic analysis of module stability is done for different chip parameters and assembly techniques and gives guidelines for chip selection. The simulation results are confirmed by measurements.