1200V RC-IGBT based on CSTBTTM with Suppressed Dynamic Cres and Partial Lifetime Control

In this paper, a newly developed low loss RC-IGBT is presented. In order to reduce the power loss of RC-IGBTs, we introduced two approaches. One is an optimization of dynamic feedback capacitance that induces a voltage tail and an increase of power losses. Another approach is a lifetime control technique for the RC-IGBT without adverse effect on the characteristics of the IGBT. The proposed 1200V RC-IGBT based on CSTBT
^TM
realizes a 29% reduction in DC loss and a 4% reduction in AC loss by using suppressed dynamic C
res
, a Partial lifetime control, in addition to our thin wafer technique.