Experimental Investigation on the Electrical Properties of SOI-LIGBT Under Total-Ionizing-Dose Radiation

Total-ionizing-dose (TID) irradiation effects on the electrical properties of the SOI-LIGBT have been studied. The TID irradiation induced positive charges buildup in the gate oxide (GOX) layer, which reduces the threshold voltage (V
th
). The negative shifting V
th
leads to the increasing collector current (I
CE
) at the same gate voltage (V
g
). When the same overdrive voltage (V$_{ov} = V_{g} - V_{th}$) is applied, the linear I
CE
(I
CElin
) increases and saturated I
CE
(I
CEsat
) decreases during irradiation. The abnormal response of the I
CE
is attributed to the modulation of the bipolar transport by the positive charges trapped in the field oxide (FOX) layer and the buried oxide (BOX) layer after irradiation. Accurate simulation is utilized to confirm the degradation mechanism of the TID effects on the SOI-LIGBT.