Interaction of hot electrons with Carbon doped GaN buffer in AlGaN/GaN HEMTs: Correlation with lateral electric field and device failure

Device design and technology parameter dependent critical voltage governing interaction of hot electrons with traps in Carbon doped GaN buffer is reported in this work. A mechanism controlling trapping of hot electrons in GaN buffer is proposed corroborating well with the experimental observations. Further, reliability of devices operating beyond critical voltage is analyzed using post failure FESEM and gate leakage analysis.