Analysis of channel properties at extremely high temperature in 3.3-kV SiC trench-etched double diffused MOS (TED-MOS®) using temperaturesensitive electrical parameters (TSEPs)

We have developed a measumement technique that combines a double pulse switching test with a short-circuit (SC) test to analyze SC behavior. Our proposed technique was utilized to analyze the channel properties of 3.3-kV SiC trench-etched double diffused MOS (TED-MOS
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) at high junction temperatures (Tj) up to 600°C. SC was used to increase Tj rapidly and locally, and turn-on waveforms were used to extract channel properties and identify the Tj of TED-MOS
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using temperature-sensitive electrical parameters (TSEPs). Results showed that, in contrast to SiC double diffused MOS (DMOS), the saturation current of TED-MOS
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was suppressed at Tj above 200°C due to its stable channel characteristics at high temperature. These superior properties of the trench-sidewall channels of TED-MOS
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at high temperature are promising for expanding SC capability.