Suppression of Hot-Hole Injection in High-Voltage Triple RESURF LDMOS With Sandwich N-P-N Layer: Toward High-Performance and High-Reliability

Hot-hole induced burnout phenomenon in a high-voltage triple reduced surface field (RESURF) LDMOS with sandwich N-P-N layer is investigated in this work. The sandwich N-P-N structure is employed in the drift region of LDMOS to obtain a further optimized trade-off between specific on-resistance (R$_{on,sp}$) and breakdown voltage (BV). However, experimental results show that the BV drops in the off-state with a period time of 2.7 s and the device burns out. To solve this problem, the corresponding burnout mechanism is analyzed and its countermeasure is proposed and demonstrated by simulation and experiment. As a result, a competitive performance with a low R$_{on,sp}$ of $32.38 \mathrm{m}\Omega \cdot cm^{2}$ and a high BV of 535 V without burnout is achieved for the triple RESURF LDMOS with sandwich N-P-N layer.