Analysis and Design Considerations of Low-voltage Trench MOSFET for Inductive Load Switching Applications

the paper summarizes both analytical and numerical considerations as well as experimental data of low voltage (50 V) trench MOSFET in unclamped (UIS) and self-clamped (SCIS) inductive switching applications. The herein presented data summarize failure mechanisms that ultimately limit UIS / SCIS rating of a device once all other design factors are exploited.