A New Generation of Power Diode: Charge Coupled Field Effect Rectifier Diode (CC-FERD)

In the pursuit of high-efficiency, low-power consumption and low-cost power semiconductor devices, we developed a new generation of power diode, a trench-based Charge Coupled Field Effect Rectifier Diode (CC-FERD). By integrating the structure design of both power diode FERD and power transistor CC-MOSFET, we demonstrated CC-FERD with very low forward voltage ($V_{F)}$, low sensitivity to thermal runaway risk, low parasitic reverse recovery charge (QRR) and low power dissipation in applications such as flyback converter.