Experimental Verification of the Junction Temperature Distribution within Press Pack IGBTs

A physical contact temperature measurement method is proposed for the evaluation of junction temperature distribution within press pack IGBTs (PP IGBTs). The emitter side molybdenum plate is grooved to overcome the difficulties of compact and enclosed structure. This proposed method is firstly verified with a single-chip submodule of PP IGBTs through the comparison of the V
ce
(T) method and infrared (IR) method. Then, the junction temperature distribution within multi-chip submodule is obtained and the results show that the temperature of outer chips increase more rapidly than other chips with increasing current. These experimental results also confirm the existed simulation results and the root reason as well. The increase of heating time and the decrease of clamping force strengthen the temperature increase of outer chips.