Radiation Influence Comparison between SiC JMOS and DMOS

Currently, Schottky diode embedded SiC MOSFETs is a popular topic because of its remarkable intrinsic diode behavior and bipolar-degradation-free operation. JMOS is one of them that exhibits much higher chip area efficiency, which means there is neither additional process nor more active-area requirement. Meanwhile, SiC is also an excellent material to adapt to many harsh environments. In some applications, such as aerospace, military, and high-energy facilities, radiation hardening is a crucial concern. In this work, an over 1,000krad of Co-60 gamma-ray irradiation experiment has been done. The general comparison between JMOS and DMOS including static and dynamic behaviors with radiation dependency will also be discussed in this paper. In short, no significant difference in radiation hardness is detected between JMOS and DMOS.