Packaging degradation studies of High Temperature SiC MOSFET discrete packages

Silicon Carbide discrete packages with high temperature capabilities have been used to study the package degradation. Power Cycling test and thermal cycling test have been used to determine the failure mechanism of these packages. Non-Destructive testing in terms of X-ray tomography has been used to track the degradation of the same sample before and along the cycling stages. Metallurgical cross-sectioning examination were deployed to analyze the failure mechanism.