Active Voltage Controlled Switching of the Power GaN HEMT

This paper presents characteristics of the GaN HEMT and proposes active controlled switching of the GaN Power HEMT using closed-loop voltage feed-back control and a current-mode gate-drive. An experimental implementation of the closed loop control strategy for GaN HEMT in a low inductance circuit is described. Simulation results and experimental switching results are presented and discussed. The paper gives full details of the circuits used. Controlled yet rapid dV/dt is obtained using closed loop GaN HEMT switching. The advantages of GaN HEMT devices and their use in closed loop switching circuits are discussed in light of the result and with regards to switching losses and EMI.