Measurements and analysis of the dark I-V-T characteristics of a photovoltaic cell: KX0B22-12X1F

This paper presents the study of the forward and reverse bias behaviour of KX0B22-12X1F monocrystalline solar cell. The electronic properties of the cell are measured in dark conditions. In order to describe its electronics properties, the standard 2-diodes behaviour is used. A nonlinear least squares approach to extract the cell parameters from the dark current-voltage (I-V) characteristics is described. The fit of the I-V curve and the extraction of diode parameters are carried out by considering the I-V characteristics of the cell in dark condition. The results obtained show that the determined parameters agree very well to the measured parameters of BX0B22-12X1F. The ideality factor n
₁
(first diode) remains unchanged throughout the temperature range studied i.e. n
₁
≈ 1. Meanwhile, the second ideality factor n
₂
(second diode) decreases with increasing temperatures from 300K up to 400K i.e. n
₂
decreases to 2.34 down to 1.79. The ideality factor n
₂
considerably depends on the temperature and the consideration of n
₂
as the six extracted parameters can act as a guide in the analysis of the results.