Effects of Thermal Annealing on Ta2O5 based CMOS compatible RRAM

In this paper, study on the thermal annealing effect is done on nanoscale W/TaO
x
/Pt resistive random access memory (RRAM) structure. Electrical characterization shows that device performance is improved after undergoing thermal annealing, with the cycle-to-cycle and device-to-device variability showing less variation with lower operating voltage. The device also undergoes CMOS BEoL compatible thermal budget.