Reliability analysis of P-type SOI FinFETs with multiple SiGe channels on the degradation of NBTI

SOI FinFETs are a multi-gate structure that can not only reduce the leakage current and improve the control of the device, but also inhibit the outflow of heat. Heat dissipation is an important issue for small chips, because high temperatures can let them unstable and even cause them to fail. In this paper, P-type multi-gate SOI FinFETs are used to analyze the reliability of negative bias temperature instability (NBTI) under room temperature. The results indicate that the estimated voltage for 10 years of lifetime is 0.0895V, and the threshold voltage (VTH) has a high dependence on the stress time. Some researchers have found that one cause of device degradation is the presence of interface defects (Nit) and oxide defects (Not). The appearance of Nit and Not caused by NBTI can be explained by the reaction-diffusion model (R-D model) [1]. In this experiment, the defects are successfully extracted by linear extrapolated ID to the midgap current (Img). The results show that both Nit and Not exist in the oxide layer, and Not is the major factor affecting degradation at room temperature.