A Computational Performance Evaluation of Negative-Capacitance MOSFETs based on Ultra-thin body Silicon and Monolayer MoS2

A computational study at atomic level was performed for negative-capacitance MOSFETs (NCFETs) with ultrathin body silicon (UTB-Si) and monolayer MoS
2
(1L-MoS
2
) as channel materials and HfO
2
as ferroelectric layer material. ~25mV/dec average subthreshold slope (SS) for at least 4-order of drain current was observed in 1L-MoS
2
NCFET and shows steeper slope comparing to the other simulated UTB-Si cases. It was found that both lower tunneling current and improved capacitance matching enabled the steep-slope feature in 1L-MoS
2
NCFET.