Cd0.2hg0.8te epi—layer for a high detectivity pc—type ir detector

High quality n-type Cd
0.2
Hg
0.8
Te epi-layers doped with In below 0.1 ppm, whose carrier concentration and mobility at 77 K are below 4×10
¹⁴
cm
⁻³
and over 2× 10
⁵
cm
²
/V·S, respectively, have been grown by LPE on CdTe (111) B substrates with EPDs below 10
⁵
cm
⁻²
. A new result obtained is that long carrier diffusion length is essentially important for realizing a high performance detector, whose detectivity reaches to D∗BLIP.