STEM EBIC for High-Resolution Electronic Characterization

Electron beam-induced current (EBIC) data, acquired in a scanning transmission electron microscope (STEM), are presented in the context of microelectronic device reliability. The mechanisms causing, and applications of, three distinct EBIC modes are discussed along with the requirements and challenges of preparing STEM EBIC-compatible samples with a focused ion beam (FIB). STEM EBIC images are acquired from samples extracted, by FIB lift-out, from off-the-shelf multilayer ceramic capacitors (MLCCs). These STEM EBIC images show two different EBIC modes simultaneously, which map both resistance and local electric fields. Observed variability in the distribution of BaTiO
₃
grain boundary resistivities is compared to predicted wear-out and reliability models. These techniques may be extended to other electronic components to map electronic signals that are otherwise inaccessible at high-resolution.