Reliability of 200mm E-mode GaN-on-Si Power HEMTs

Reliability of commercial 100V E-mode GaN-on-Si power HEMTs are presented, fabricated on an industrial 200mm Si CMOS compatible Au-free technology platform. Electrical characteristics of GaN HEMTs are discussed first, delivering true E-mode operation with Vth of ~1.5V and ultralow drain leakage current of <1e-10A/mm at fully rated 100V. Then, for the first time, successful JEDEC qualification of GaN transistors on 200mm Si substrate is reported. Finally, current collapse or dynamic Rds-on free operation up to 100V is demonstrated at 100 kHz with a stress-to-measure delay time <1 micro-second, achieved by control of the passivation/GaN interface traps, GaN epi bulk traps, and the lateral/vertical electric fields. In summary, high performance and reliable 200mm 100V E-mode GaN power HEMTs are commercially available for power electronics industry.