A Level Shift Gate Driving Circuit of SiC MOSFET with Crosstalk Suppression Capability

The resistor-capacitor-diode (RCD) level shift driving circuit takes advantages of low cost and tunable negative voltage level, therefore, it can satisfy the needs of drivers for various types of SiC MOSFETs easily. However, since the slow startup response of conventional RCD level shifter, it is not suitable for double pulse test (DPT). Furthermore, the conventional RCD level shifter does not consider the crosstalk problem caused by the high switching speed of SiC MOSFET in phase leg configuration. This paper introduces a novel high speed RCD level shift driving circuit. The proposed driving circuit has fast startup response to satisfy the needs of DPT. Moreover, in order to suppress the crosstalk, the snubber capacitors are added in the proposed driving circuit to reduce the impedance of the path for displacement current. Finally, the experimental results demonstrate the effectiveness of this proposed driving circuit.