Measure the Thermal Parameters of SiC MOSFET through Case Temperature

SiC MOSFET is gathering more important in the industrial field for its excellent electro-thermal properties. To investigate the thermal performance of the SiC MOSFET module, the thermal network parameters is the most dramatic method. This paper proposed a method to measure the thermal parameters of SiC MOSFET module in the Cauer type by establishing the relation between the thermal parameters and the time constants of case temperature cooling curves. The method achieves in no need of thermal-equilibrium state, power losses and even the measurement of junction temperature. The experiment is carried out and the results prove the feasibility of the method.