Accurate Conducted EMI Simulation of a Buck Converter With a Compact Model for an SiC-MOSFET

This paper describes conducted Electromagnetic Interference (EMI) simulation of a buck converter using a compact model for an SiC-MOSFET. The model simulates the peak values of leakage current flowing out of a heatsink i
leak
accurately since the model reproduces the experimental results of drain-source voltage and its time derivative. In addition, the simulated spectrum of conducted disturbance voltage is in good agreement with the experimental one up to 20 MHz within a maximum error of 6 dB. From 20 to 30 MHz, the simulated spectrum shows the similar peak values to the experimental one with a little deviation in the resonant frequency. The simulated results indicate that the model would be a promising tool for conducted EMI analysis of the power converters using SiC-MOSFETs.