Analytical Modeling of IGBT during Switching Transient for High Voltage Direct Current Converter Valve Group

With the growing demand for renewable energy, the high voltage direct current (HVDC) technology with wide range of power transmission, small loss and strong control capabilities is receiving more and more attention. The high-power switching device such as IGBT used in the converter generates high slew rate current and voltage during the switching processes, and then the electromagnetic interference noise is propagated through the parasitic inductances and parasitic capacitances in the circuit. Therefore, the analytical model of high-power IGBTs is proposed in this paper to describe the switching transient characteristics, with the full consideration of parasitic inductances and parasitic capacitances of IGBTs. Then, the analytical model is verified by comparison between model-calculated and experimental results, based on a double-pulse test platform with an applied voltage of 3000 V and current of 600 A.