Performance Comparison of Power MOSFETs having Different SiC Substrate

A power MOSFET is a specific type of MOSFET designed to handle the high level of powers. Compare to other power semiconductor device, such as an insulated gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltage. Silicon carbide (SiC) power MOSFETs are available only for low voltage and high power applications, because for blocking voltage faster than 150V. Thus, starting from a conventional 4H-SiC, 6H-SiC and 3C-SiC low voltage power MOSFETs, a novel device for high power applications has been designed. The performance parameters such as: I-V, output, transfer, breakdown, C-V and mobility behavior for 4H-SiC, 6H-SiC and 3C-SiC substrate based power MOSFETs were obtained and analyzed using ATLAS TCAD (SILVACO) simulation tool.